Semiconductor chip and semiconductor device, and method for manufacturing semiconductor device

ABSTRACT

A semiconductor chip is provided comprising a semiconductor substrate on which an integrated circuit is formed. The semiconductor chip, which is provided on the semiconductor substrate in an area array, further comprises a plurality of electrodes electrically coupled with the inside of the semiconductor substrate, wherein the electrodes are arranged into a plurality of first groups respectively lined along a plurality of paralleling first straight lines and, further, into a plurality of second groups respectively lined along a plurality of second straight lines which extend so as to intersect with the first straight lines.

RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 12,844,190 filed Jul. 27, 2010 which is a divisional of Ser.No. 12/403,421 filed Mar. 13, 2009, now U.S. Pat. No. 7,786,598 issuedAug. 31, 2010, which is a divisional of Ser. No. 11/556,224 filed Nov.3, 2006, now U.S. Pat. No. 7,525,200 issued Apr. 28, 2009, which is adivisional of Ser. No. 11/023,326 filed Dec. 22, 2004, now U.S. Pat. No.7,154,187 issued Dec. 26, 2006 which claims priority to Japanese PatentApplication No. 2003-427487 filed Dec. 24, 2003 all of which are herebyexpressly incorporated by reference herein in their entireties.

BACKGROUND

1. Field of the Invention

The present invention relates to a semiconductor chip and asemiconductor device, and to a method for manufacturing thesemiconductor device.

2. Related Art

With a conventional semiconductor chip, the area for arrangingelectrodes is highly restricted, imposing restrictions on designs ofintegrated circuits. Accordingly, if there are fewer restrictions on theelectrode arrangement area, there will be a higher degree of freedom indesigning integrated circuits, and a semiconductor chip can be morereliable.

The present invention aims to provide a semiconductor chip and asemiconductor device having an excellent mountability and a high degreeof freedom in designing integrated circuits, and to provide a method formanufacturing the semiconductor device.

SUMMARY

The semiconductor chip of the present invention includes:

-   -   a semiconductor substrate on which an integrated circuit is        formed, and    -   a plurality of electrodes which are provided on the        semiconductor substrate in an area array and are arranged into a        plurality of first groups respectively lined along a plurality        of paralleling first straight lines which extend along one side        of the semiconductor substrate and, further, into a plurality of        second groups respectively lined along a plurality of        paralleling second straight lines which extend so as to        intersect with the first straight lines. According to the        present invention, the electrodes of the semiconductor chip are        provided in an area array. Therefore, the area in which to        arrange the electrodes on the surface of the semiconductor        substrate will be wider. Accordingly, there will be fewer        restrictions on the electrode arrangement, thereby increasing a        degree of freedom in designing integrated circuits. Further,        since the electrodes are arranged into first and second groups,        the wire pattern can be designed without difficulty. By the        present invention, it becomes possible to provide a        semiconductor chip having an excellent mountability and a high        degree of freedom in designing integrated circuits.

In this semiconductor chip, the second straight line may extenddiagonally from the first straight line.

In this semiconductor chip, two adjacent lines of the second straightlines may extend in parallel.

In this semiconductor chip, two adjacent lines of the second straightlines may be line symmetrical around a perpendicular line of the firststraight line as an axis of symmetry.

In this semiconductor chip, the plurality of second straight lines mayinclude a straight line A, a straight line B at a first side of thestraight line A, and a straight line C, at a second side of the straightline A that is opposite to the first side, and

-   -   the straight line A and the straight line B may extend in        parallel, and the straight line A and the straight line C may be        line symmetrical around a perpendicular line of the first        straight line as an axis of symmetry.

In this semiconductor chip, the second straight line extendsperpendicular to the first straight line.

The semiconductor device of the present invention includes:

-   -   a substrate on which a wire pattern containing a plurality of        lands is formed, and    -   a semiconductor chip on which an integrated circuit is formed,        wherein a plurality of electrodes are provided thereon in an        area array and mounted on the substrate in a manner that each        electrode faces any one of the lands so as to electrically        couple with the land,    -   wherein the electrodes are arranged into a plurality of first        groups respectively lined along a plurality of paralleling first        straight lines which extend along one side of the semiconductor        chip and, further, into a plurality of second groups        respectively lined along a plurality of second straight lines so        as to intersect with the first straight lines, and    -   wherein the wire pattern contains a plurality of wires which are        respectively drawn out from the lands and extend so as to        intersect with the first straight lines. According to the        present invention, it is possible to provide a semiconductor        device containing a semiconductor chip having a high degree of        freedom in circuitry designing.

In this semiconductor device, the land may have an external shapeexpanding along the first straight line.

In this semiconductor device, the second straight line may extenddiagonally from the first straight line.

In this semiconductor device, two adjacent lines of the second straightlines may extend in parallel.

In this semiconductor device, two adjacent lines of the second straightlines may be line symmetrical around the first straight line as an axisof symmetry.

In this semiconductor device,

-   -   a plurality of second straight lines may include a straight line        A, a straight line B at a first side of the straight line A, and        a straight line C at a second side of the straight line A that        is opposite to the first side, and    -   the straight line A and the straight line B may extend in        parallel, and the straight line A and the straight line C may be        line symmetrical around the first straight line as an axis of        symmetry.

In this semiconductor device, the second straight line may extendperpendicular to the first straight line.

In this semiconductor device, the wire of one group respectively drawnout from the land of one group that faces the electrode of an identicalsecond group may be drawn out from one side, out of two sides, of theland of the one group along the first straight line.

In this semiconductor device, the wires drawn out from the lands of twoadjacent groups of the one groups may respectively extend in oppositedirections.

In this semiconductor device, the wires drawn out from the lands of twoadjacent groups of the one groups may respectively extend in the samedirection.

In this semiconductor device, the wire drawn out from the land thatfaces the electrode arranged along the straight line A may extend in adirection opposite from a direction in which the wire drawn out from theland that faces the electrode arranged along the straight line B extendsand, further, in the same direction as a direction in which the wiredrawn out from the land that faces the electrode arranged along thestraight line C extends.

In this semiconductor device, the land of one group facing the electrodeof the identical second group may project on one side, out of two sides,of the land along the first straight line so as to have a varied length,and may be formed in a manner that the projection length is greater inan order of arrangement along any second straight line.

In this semiconductor device, of the wires of one group respectivelydrawn out from the lands of the first group facing the electrodes of theidentical second group, one of the wires drawn out from one second landof the lands having a projection length greater only than a projectionlength of the first land is arranged next to one of the wires drawn outfrom any one of the first lands in a direction in which the first landprojects.

The method for manufacturing a semiconductor device according to thepresent invention includes:

-   -   mounting a semiconductor chip having a plurality of electrodes        onto a substrate, on which a wire pattern having a plurality of        lands is formed, in a manner that the electrode faces the wire        pattern so that the electrode is electrically coupled with the        wire pattern,    -   arranging the electrodes, which are provided on the        semiconductor chip in an area array, into a plurality of first        groups respectively lined along a plurality of paralleling first        straight lines which extend along one side of the semiconductor        substrate and, further, into a plurality of second straight        groups respectively lined along a plurality of paralleling        second straight lines which extend so as to intersect with the        first straight lines,    -   arranging the lands into a plurality of third groups        respectively lined along a plurality of paralleling third        straight lines,    -   wherein the wire pattern contains a plurality of wires which are        respectively drawn out from the lands and extend so as to        intersect with the third straight lines, and    -   electrically coupling the electrode and the land by aligning the        semiconductor chip with the substrate in a manner that the first        straight line and the third straight line lie in parallel with        each other so that each electrode faces any one of the lands.        According to the present invention, it is possible to provide a        semiconductor device containing a semiconductor chip having a        high degree of freedom in circuitry designing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram for describing the semiconductor device of a firstembodiment applying the present invention.

FIG. 2 is a diagram for describing the semiconductor device of the firstembodiment applying the present invention.

FIG. 3 is a diagram for describing the semiconductor device of the firstembodiment applying the present invention.

FIG. 4 is a diagram for describing the semiconductor device of the firstembodiment applying the present invention.

FIG. 5 is a diagram for describing the method for manufacturing thesemiconductor device of the first embodiment applying the presentinvention.

FIG. 6 is a diagram for describing the semiconductor device of a secondembodiment applying the present invention.

FIG. 7 is a diagram for describing the semiconductor device of thesecond embodiment applying the present invention.

FIG. 8 is a diagram for describing the semiconductor device of a thirdembodiment applying the present invention.

FIG. 9 is a diagram for describing the semiconductor device of the thirdembodiment applying the present invention.

FIG. 10 is a diagram for describing the semiconductor device of a fourthembodiment applying the present invention.

FIG. 11 is a diagram for describing the semiconductor device of thefourth embodiment applying the present invention.

FIG. 12 is a diagram illustrating a display device containing thesemiconductor device of the embodiments applying the present invention.

FIG. 13 is a diagram illustrating an electronic apparatus containing thesemiconductor device of the embodiments applying the present invention.

FIG. 14 is a diagram illustrating an electronic apparatus containing thesemiconductor device of the embodiments applying the present invention.

DETAILED DESCRIPTION

Hereafter, embodiments of the present invention will be described withreference to the accompanying drawings. However, the present inventionis not limited to the following embodiments.

First Embodiment

From FIG. 1 to FIG. 4 are diagrams for describing the semiconductordevice of a first embodiment applying the present invention. Moreprecisely, FIG. 1 is a diagram outlining a semiconductor device 1 of theembodiment applying the present invention. Further, FIG. 2 is a diagramshowing a semiconductor chip 10. FIG. 3 is a partially enlarged diagramof the semiconductor device 1. However, in FIG. 3, a semiconductorsubstrate 12 is omitted for the convenience of describing a couplingsituation between an electrode 20 and a land 42. Further, FIG. 4 is across-sectional view taken along a line IV-IV of FIG. 3.

The semiconductor device of the present embodiment includes, as shown inFIG. 1, the semiconductor chip 10. The semiconductor chip 10 includes,as shown in FIG. 2, the semiconductor substrate 12. In addition, FIG. 2is a diagram illustrating a configuration observed from an opposite sideof the surface (active surface) of the semiconductor chip 10 on whichthe electrode 20 is formed. Although the external shape of thesemiconductor chip 10 is not limited to any particular shape, it may berectangular as shown in FIG. 2. On the semiconductor substrate 12, anintegrated circuit 13 is formed (see FIG. 4). The composition of theintegrated circuit 13 is not limited to a particular composition;however, the circuit 13 may be composed of a transistor or a memoryelement.

The semiconductor chip 10 contains a plurality of electrodes 20 as shownin FIG. 2. The electrode 20 is provided on the semiconductor substrate12. The electrode 20 may be electrically coupled with the inside of thesemiconductor substrate 12. Here, all electrodes 20 may be electricallycoupled with the inside of the semiconductor substrate 12. Possibly, anelectrode that is not electrically coupled with the inside of thesemiconductor substrate 12 may also be called as the electrode 20. Theelectrode 20 may be electrically coupled with the integrated circuit 13.Possibly, an electrode that is not electrically coupled with theintegrated circuit 13 may also be called as the electrode 20. Theelectrode 20 may include a pad and a bump provided on the pad (notshown). In the present embodiment, as shown in FIG. 2, the electrodes 20are provided in an area array. Since the electrodes 20 are provided inan area array, the area in which to arrange the electrodes 20 on thesemiconductor substrate 12 will be wider. Because of this, there will befewer restrictions on the arrangement of the electrodes 20, therebyincreasing a degree of freedom in designing the integrated circuit 13.Further, as shown in FIG. 2, the electrodes 20 are arranged into aplurality of first groups 310 respectively lined along a plurality ofparalleling straight lines 110. Also, as shown in FIG. 2, the firststraight line 110 is a straight line extending along one side of thesemiconductor substrate 12. In addition, as shown in FIG. 2, theelectrodes 20 are arranged into a plurality of second groups 320respectively lined along a plurality of second straight lines 120 whichextend so as to intersect with the first straight lines 110. As shown inFIG. 2, the second straight line 120 may extend diagonally from thefirst straight line 110. Also, two adjacent second straight lines 120may extend in parallel. Here, all the second straight lines 120 mayextend in parallel. In the present embodiment, because the electrodes 20are arranged into the first and second groups 310 and 320, the wirepattern of the substrate for packaging the semiconductor chip 10 can bedesigned without difficulty. That is, the wire pattern can be readilydesigned in such a manner that the wire pattern does not contact anelectrode 20 that is not the object electrode, and, thus, mountabilityof the semiconductor chip 10 can be enhanced.

The semiconductor chip 10 may further contain a composition of awell-known semiconductor chip such as a passivation layer or aninter-layer insulating film (not shown). Further, as shown in FIG. 1,the semiconductor chip 10 is mounted on the substrate 30. Thesemiconductor chip 10 is mounted on the substrate 30 in a manner thatthe electrode 20 faces the land 42 of a wire pattern 40 (see FIGS. 3 and4).

The semiconductor device of the present embodiment contains thesubstrate 30 as shown in FIG. 1. The material for the substrate 30 isnot limited to any particular material but may be organic (e.g., anepoxy substrate) or inorganic (e.g., a ceramic substrate or a glasssubstrate), or may have a compound structure thereof (e.g., aglass-epoxy substrate). The substrate 30 may be a rigid substrate.Alternatively, the substrate 30 may be a flexible substrate such as apolyester substrate or a polyimide substrate. The substrate 30 may be asubstrate used for a chip on film (COF). Further, the substrate 30 maybe a single-layered substrate made of a single layer or a multi-layeredsubstrate having a plurality of laminated layers. Additionally, theshape or the thickness of the substrate 30 is not limited to anyparticular shape or thickness.

As shown in FIG. 3, the substrate 30 includes the wire pattern 40.Incidentally, FIG. 3 is a partially enlarged view of the semiconductordevice 1. In FIG. 3, however, the semiconductor substrate 12 is omittedfor the convenience of explaining a coupling situation between theelectrode 20 and the land 42. The wire pattern 40 may be formed bylaminating, or by using a single layer of, any of copper (Cu), chromium(Cr), titanium (Ti), nickel (Ni), titanium-tungsten (Ti—W), gold (Au),aluminum (Al), nickel vanadium (NiV), and tungsten (W). If amultilayered substrate is prepared for use as the substrate 30, the wirepattern 40 may be provided between each layer. Further, if a glasssubstrate is used as the substrate 30, the wire pattern 40 may be formedwith a metal layer, or a metal-compound layer, of indium tin oxide(ITO), Cr, or Al, for example, or with a layer mixing such a metal layerand a metal-compound layer. The method for forming the wire pattern 40is not limited to any particular method. The wire pattern 40 may beformed by sputtering, for example, or by employing an additive processin which the wire pattern 40 is formed by electroless plating. Further,the wire pattern 40 may be plated with solder, tin, gold, or nickel, forexample.

The wire pattern 40 contains a plurality of lands 42. The land 42 is thepart that faces the electrode 20 of the semiconductor chip 10 so as toelectrically couple with the electrode 20. As shown in FIG. 3, the land42 may be arranged so as to face the electrode 20. The lands 42 may bealigned to be separated into groups along the first straight lines 110and into groups along the second straight lines 120. As shown in FIG. 3,the land 42 may have an external shape expanding along the firststraight line 110. Further, all the lands 42 may be formed to have thesame size. The wire pattern 40 contains, as shown in FIG. 3, a pluralityof wires 44 which are respectively drawn out from the lands 42 andextend so as to intersect with the first straight lines 110. As shown inFIG. 3, the wire 44 of one group respectively drawn out from the land 42of one group that faces the electrode 20 of an identical second group320 may be drawn out from one side, out of two sides, of the land 42along the first straight line 110. Further, as shown in FIG. 3, thewires 44 drawn out from the lands 42 that face the electrodes 20 of twoadjacent second groups 320 may respectively extend in oppositedirections.

In the semiconductor device of the present embodiment, the semiconductorchip 10 is mounted on the substrate 30 as shown in FIG. 1. As shown inFIG. 3 or FIG. 4, the semiconductor chip 10 is mounted in a manner thatthe electrode 20 faces the land 42. Further, the electrode 20 and theland 42 are electrically coupled. By electrically coupling the electrode20 with the land 42, the electrode 20 and the wire pattern 40 areelectrically coupled. The electrical coupling of the electrode 20 andthe land 42 may be conducted by having them in contact with one anotheras shown in FIG. 4. Alternatively, the electrical coupling of theelectrode 20 and the land 42 may be carried out by interveningconductive particles between the electrode 20 and the land 42 (notshown). Alternatively, for the electrical coupling of the electrode 20and the land 42, an alloy junction (e.g., an Au—Au or an Au—Sn junction)may be used.

As shown in FIG. 4, the semiconductor device of the embodiment applyingthe present invention may further include a reinforcement part 25 foradhering the semiconductor chip 10 to the substrate 30. Thereinforcement part 25 can further increase reliability of thesemiconductor device. The material of the reinforcement part 25 may beresin but is not limited thereto.

The semiconductor device of the present embodiment is composed ashereinbefore described. The method for manufacturing the semiconductordevice will be described as follows.

The method for manufacturing the semiconductor device of the presentembodiment includes electrically coupling the electrode 20 with the wirepattern 40 by mounting the semiconductor chip 10 having a plurality ofelectrodes 20 onto the substrate 30, on which the wire pattern 40 havinga plurality of lands 42 is formed, in a manner that the electrode 20faces the wire pattern 40. The process thereof is described in thefollowing.

The present process may include preparing the semiconductor chip 10 (seeFIG. 2). The semiconductor chip 10 contains a plurality of electrodes20. The electrodes 20 are provided on the semiconductor chip 10 in anarea array. The electrodes 20 are arranged into a plurality of firstgroups 310 respectively lined along a plurality of paralleling firststraight lines 110. The first straight line 110 is a straight line thatextends along one side of the semiconductor chip 10. Further, theelectrodes 20 are arranged into a plurality of second groups 320respectively lined along a plurality of second straight lines 120 whichextend so as to intersect with the first straight lines 110.

As shown in FIG. 5, the present process may include preparing thesubstrate 30. As shown in FIG. 5, on the substrate 30, the wire pattern40 having a plurality of lands 42 is formed. The lands 42 are arrangedinto a plurality of third groups 330 respectively lined along aplurality of paralleling third straight lines 130. In addition, the wirepattern 40 contains a plurality of wires 44 which are respectively drawnout from the lands 42 and extend so as to intersect with the thirdstraight lines 130.

The present process includes aligning the semiconductor chip 10 with thesubstrate 30 so that the first straight line 110 and the third straightline 130 lie in parallel with each other and so that the electrode 20faces the land 42 (see FIG. 3). The electrode 20 of one first group 310may face the land 42 of any one third group 330. Thus, the electrode 20and the land 42 are electrically coupled. To electrically couple theelectrode 20 with the land 42, any well-known method may be employed. Byelectrically coupling the electrode 20 with the land 42, the electrode20 and the wire pattern 40 may be electrically coupled.

Additionally, the semiconductor device 1 may be manufactured aftercarrying out a process such as forming the reinforcement part 25 foradhering the semiconductor chip 10 to the substrate 30 (see FIG. 1).

Second Embodiment

FIGS. 6 and 7 are diagrams for describing the semiconductor device of asecond embodiment applying the present invention. Further, in thesemiconductor device of the present embodiment, also, descriptionsalready given above shall be employed wherever applicable.

The semiconductor device of the present embodiment includes asemiconductor chip 15. FIG. 6 is a diagram for describing thesemiconductor chip 15. The semiconductor chip 15 contains asemiconductor substrate 16 and a plurality of electrodes 22 provided onthe semiconductor substrate 16 in an area array. As shown in FIG. 6, theelectrodes 22 are arranged into a plurality of groups 350 respectivelylined along a plurality of paralleling first straight lines 150 whichextend along one side of the semiconductor substrate 16. Also, as shownin FIG. 6, the electrodes 22 are arranged into a plurality of secondgroups 360 respectively lined along a plurality of second straight lines160 which extend so as to intersect with the first straight lines 150.The second straight line 160 extends diagonally from the first straightline 150. Further, in the semiconductor device of the presentembodiment, the second straight lines 160 include a straight line A 162,a straight line B 164 arranged on a first side of the straight line A162, and a straight line C 166 arranged on a second side of the straightline A that is opposite to the first side. As shown in FIG. 6, thestraight line A 162 and the straight line B 164 extend in parallel.Further, as shown in FIG. 6, the straight line A 162 and the straightline C 166 are line symmetrical around a perpendicular line of the firststraight line 150 as the axis of symmetry.

The semiconductor device of the present embodiment comprises a substrate32 having a wire pattern 45 containing a plurality of lands 46 (see FIG.7). On the substrate 32, the semiconductor chip 15 is mounted. Further,FIG. 7 is a partially enlarged diagram of the semiconductor device ofthe present embodiment, illustrated for describing a coupling situationof the electrode 22 and the land 46. However, in FIG. 7, thesemiconductor substrate 16 is omitted for the convenience of explainingthe coupling situation between the electrode 22 and the land 46. Inaddition, as shown in FIG. 7, the land 46 is arranged so as to face theelectrode 22.

As shown in FIG. 7, the wire pattern 45 includes a plurality of wires 47which are respectively drawn out from the lands 46 and extend so as tointersect with the first straight lines 150. As shown in FIG. 7, thewire 47 of one group respectively drawn out from the land 46 that facesthe electrode 22 of an identical second group 360 may be drawn out fromone side, out of two sides, of the land 46 along the first straight line150. As described earlier, the second straight lines 160 include thestraight line A 162, the straight line B 164, and the straight line C166. Additionally, as shown in FIG. 7, the wire 47 drawn out from theland 46 that faces the electrode 22 arranged along the straight line A162 may respectively extend in a direction opposite from a direction inwhich the wire 47 drawn out from the land 46 that faces the electrode 22arranged along the straight line B 164 extends. Moreover, the wire 47drawn out from the land 46 that faces the electrode 22 arranged alongthe straight line A 162 may extend in the same direction as thedirection in which the wire 47 drawn out from the land 46 that faces theelectrode 22 arranged along the straight line C 166 extends.

Third Embodiment

FIGS. 8 and 9 are diagrams for describing the semiconductor device of athird embodiment applying the present invention. Further, in thesemiconductor device of the present embodiment, also, descriptionsalready given above shall be employed wherever applicable.

The semiconductor device of the present embodiment includes asemiconductor chip 17. FIG. 8 is a diagram for describing thesemiconductor chip 17. The semiconductor chip 17 includes asemiconductor substrate 18 and a plurality of electrodes 24 provided onthe semiconductor substrate 18 in an area array. As shown in FIG. 8, theelectrodes 24 are arranged into a plurality of first groups 370respectively lined along a plurality of paralleling first straight lines170 which extend along one side of the semiconductor substrate 18. Also,as shown in FIG. 8, the electrodes 24 are arranged into a plurality ofsecond groups 380 respectively lined along a plurality of secondstraight lines 180 which extend so as to intersect with the firststraight lines 170. The second straight line 180 extends diagonally fromthe first straight line 170. Further, in the semiconductor device of thepresent embodiment, two adjacent second straight lines 180 are linesymmetrical around the first straight line 170 as the axis of symmetry.

The semiconductor device of the present embodiment comprises a substrate34 having a wire pattern 48 containing a plurality of lands 49 (see FIG.9). FIG. 9 is a partially enlarged diagram illustrating thesemiconductor device of the present embodiment. On the substrate 34, thesemiconductor chip 17 is mounted. Further, as shown in FIG. 9, the land49 is arranged so as to face the electrode 24.

As shown in FIG. 9, the wire pattern 48 includes a plurality of wires 50which are respectively drawn out from the lands 49 and extend so as tointersect with the first straight lines 170. As shown in FIG. 9, thewire 50 of one group drawn out from the land 49 that faces the electrode24 of an identical second group 380 may be drawn out from one side, outof two sides, of the land 49 along the first straight line 170. Further,as shown in FIG. 9, the wires 50 drawn out from the lands 49 that facethe electrodes 24 of two adjacent second groups may respectively extendin the same direction. Here, all wires 50 may extend in the samedirection.

Fourth Embodiment

FIGS. 10 and 11 are diagrams for describing the semiconductor device ofa fourth embodiment applying the present invention. Further, in thesemiconductor device of the present embodiment, also, descriptionsalready given above shall be employed wherever applicable.

The semiconductor device of the present embodiment includes asemiconductor chip 60. FIG. 10 is a diagram for describing thesemiconductor chip 60. The semiconductor chip 60 contains asemiconductor substrate 62 and a plurality of electrodes 70 provided onthe semiconductor substrate 62 in an area array. As shown in FIG. 10,the electrodes 70 are arranged into a plurality of first groups 410respectively lined along a plurality of paralleling first straight lines210 which extend along one side of the semiconductor substrate 62. Also,as shown in FIG. 10, the electrodes 70 are arranged into a plurality ofsecond groups 420 respectively lined along a plurality of secondstraight lines 220 which extend so as to intersect with the firststraight lines 210. Further, as shown in FIG. 10, the second straightline 220 extends perpendicular to the first straight line 210.

The semiconductor device of the present embodiment comprises a substrate80 having a wire pattern 84 containing a plurality of lands 92 (see FIG.11). FIG. 11 is a partially enlarged diagram illustrating thesemiconductor device of the present embodiment. On the substrate 80, thesemiconductor chip 60 is mounted. Further, the land 92 is arranged so asto face the electrode 70. As shown in FIG. 11, the land 92 of one groupfacing the electrode 70 of an identical second group 420 may project onone side, out of two sides, of the land 92 along the first straight line210 so as to have a varied length and may be formed in a manner that theprojection length is greater in an order of arrangement along any secondstraight line 220.

As shown in FIG. 11, the wire pattern 84 includes a plurality of wires94 which are respectively drawn out from the lands 92 and extend so asto intersect with the first straight lines 210. As shown in FIG. 11, thewire of one group respectively drawn out from the land 92 that faces theelectrode 70 of an identical second group 420 may be drawn out from oneside, out of two sides, of the land 92 along the first straight line210. Further, of the wires of one group respectively drawn out from thelands 92 of the first group facing the electrodes 70 of the identicalsecond group 420, one wire 94 drawn out from one second land having aprojection length greater only than that of a first land is arrangednext to the one wire 94 drawn out from any one first land in a directionin which the first land projects.

FIG. 12 illustrates a display device 1000 containing the semiconductordevice of the embodiments applying the present invention. The displaydevice 1000 may be a liquid-crystal display device or an electricalluminescence (EL) display device, for example. Further, as electronicapparatuses containing the semiconductor device 1, a notebook-sizedpersonal computer 2000 and a mobile telephone 3000 are shown in FIGS. 13and 14, respectively.

Further, according to the present invention, embodiments of the presentinvention are not limited to the above-described embodiments but canhave various alternatives. That is, the present invention includescompositions which are, in substance, the same as the compositionsdescribed in the embodiments (such as a composition having the samefunction, method, and result, or a composition having the same objectand effect). Further, the present invention includes compositions inthat non-essential elements of the compositions described in theembodiments are replaced with other elements. Furthermore, the presentinvention includes compositions that exert the same operational effectsas with the compositions described in the embodiments. Moreover, thepresent invention includes techniques well known in the art in additionto the compositions as described in the embodiments.

1. A semiconductor chip comprising: a semiconductor substrate on whichan integrated circuit is formed; and a plurality of electrodes which areprovided on the semiconductor substrate and are arranged into aplurality of first groups each including more than two electrodes andrespectively lined along a plurality of paralleling first straight lineswhich extend along one side of the semiconductor substrate and, further,into a plurality of second groups each including more than twoelectrodes and respectively lined along a plurality of second straightlines which extend diagonally from the first straight lines; wherein thesecond straight lines extend so as to not cross each other in an areathat the second straight lines overlap the semiconductor substrate;wherein two adjacent lines of the second straight lines are linesymmetrical about a third line that is perpendicular to the firststraight lines and at an axis of symmetry between the two adjacent linesof the second straight lines; and wherein all the electrodes areprovided only on the first straight lines and the second straight lines.2. A semiconductor substrate on which an integrated circuit is formed;and a plurality of electrodes which are provided on the semiconductorsubstrate and are arranged into a plurality of first groups eachincluding more than two electrodes and respectively lined along aplurality of paralleling first straight lines which extend along oneside of the semiconductor substrate and, further, into a plurality ofsecond groups each including more than two electrodes and respectivelylined along a plurality of second straight lines which extend diagonallyfrom the first straight lines; wherein the second straight lines extendnot to cross each other in an area that the second straight linesoverlap the semiconductor substrate; wherein the plurality of secondstraight lines include a straight line A, a straight line B arranged ona first side of the straight line A, and a straight line C arranged on asecond side of the straight line A that is opposite to the first side;wherein the straight line A and the straight line B extend in parallel,and the straight line A and the straight line C are line symmetricalabout a third line that is perpendicular to the first straight lines andat an axis of symmetry between the straight line A and the straight lineC; and wherein all of the electrodes are provided only on the firststraight lines and the second straight lines.